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| APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 900V RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * G3 S3 Q1 CR1B CR3B Q3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration * * * * G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 900 30 23 75 20 120 250 8.8 2.9 1940 Unit V A V m W A mJ APTC90H12SCTG - Rev 1 September, 2009 Tc = 25C Tc = 80C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC90H12SCTG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Tj = 25C Tj = 125C 2.5 Typ 500 100 3 Max 100 120 3.5 100 Unit A m V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125C) VGS = 10V VBus = 600V ID = 26A RG = 7.5 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Inductive switching @ 125C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Min Typ 6800 330 270 32 115 70 20 400 25 900 750 1278 867 J ns nC Max Unit pF J Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 30A VR = 133V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C di/dt = 200A/s Test Conditions VR=200V Tj = 25C Tj = 125C Tc = 85C Min 200 Typ Max 250 500 Unit V A A 30 1.1 1.4 0.9 24 48 33 150 1.15 V APTC90H12SCTG - Rev 1 September, 2009 ns nC www.microsemi.com 2-6 APTC90H12SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 32 56 10 1.6 2.3 40 96 69 Max 200 1000 1.8 3 Unit V A A V nC pF IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode Parallel SiC diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.2 1.8 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit k % K % www.microsemi.com 3-6 APTC90H12SCTG - Rev 1 September, 2009 APTC90H12SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical CoolMOS Performance Curve 250 200 150 ZCS VDS=600V D=50% RG=7.5 TJ=125C TC=75C RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) Switching Energy vs Gate Resistance Frequency (kHz) ZVS 100 50 0 10 12.5 15 17.5 20 22.5 25 ID, Drain Current (A) Hard switching Switching Energy vs Current 2 Eon and Eoff (mJ) 2 1 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 VDS=600V RG=7.5 TJ=125C L=100H Eon 3 Switching Energy (mJ) Eoff 2 Eon Eoff 1 VDS=600V ID=26A TJ=125C L=100H 0 5 10 15 20 25 30 35 Gate Resistance (Ohms) www.microsemi.com 4-6 APTC90H12SCTG - Rev 1 September, 2009 APTC90H12SCTG 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=20, 8V 80 6V BVDSS, Drain to Source Breakdown Voltage 120 ID, Drain Current (A) Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 35 ID, DC Drain Current (A) 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (C) 150 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20 100 limited by RDSon 100 s 10 10 ms 1 Single pulse TJ=150C TC=25C 1 10 100 1000 0.1 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Ciss 10 8 6 4 Gate Charge vs Gate to Source Voltage VDS=400V ID=26A TJ=25C Coss 0 0 50 100 150 200 Gate Charge (nC) 250 300 www.microsemi.com 5-6 APTC90H12SCTG - Rev 1 September, 2009 2 APTC90H12SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2 Thermal Impedance (C/W) 0.9 1.6 0.7 1.2 0.8 0.4 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25C Reverse Characteristics 100 IR Reverse Current (A) 20 IF Forward Current (A) 15 10 TJ=75C 75 50 TJ=125C TJ=75C TJ=125C TJ=175C TJ=25C 5 0 0 0.5 1 1.5 2 TJ=175C 25 2.5 3 3.5 0 400 600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 1000 1200 1400 1600 VR Reverse Voltage (V) 700 C, Capacitance (pF) 600 500 400 300 200 100 0 1 APTC90H12SCTG - Rev 1 September, 2009 10 100 VR Reverse Voltage 1000 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 |
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